PA1070

High-performance broadband solid-state RF amplifier covering 20 MHz to 18 GHz with continuous-wave output up to 200 W and pulsed output capability up to 1000 W. Built using modern RF transistor technologies (GaN, LDMOS and GaAs), this amplifier is designed for ultra-wideband applications where efficiency, reliability and ruggedness are required.

Key features

• Frequency range: 20 MHz – 18 GHz
• Output power: up to 200 W CW; up to 1000 W pulsed
• Solid-state designs using GaN, LDMOS and GaAs for high efficiency and long MTBF
• Ultra-wideband performance with stable operation across the band
• Robust and rugged construction for demanding environments
• User-friendly design intended for integration and test use

Typical applications

• Aerospace and defense systems (radar, electronic warfare, jamming)
• SATCOM and wideband communications
• EMI / RFI testing and laboratory test & measurement
• PIM testing and system integration verification

Benefits

• Wide instantaneous bandwidth reduces the need for multiple narrowband amplifiers
• High efficiency lowers cooling and power supply demands compared with older technologies
• Solid-state reliability provides safer CW and pulsed operation for mission-critical deployments
• Compact, easy-to-integrate form factor suitable for lab racks and field systems

For system design, procurement and integration, request the detailed datasheet to confirm electrical interfaces, connector types, control and interlock requirements, mechanical dimensions and environmental specifications.